Distributed microwave plasma reactor for semiconductor processing
US5948168A · kind A · utility
64Cited by
4References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 9, 1997 |
| Grant date | Sep 7, 1999 |
| Priority date | — |
| Expiry date | Oct 9, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma reactor has plural dielectric gas injection tubes extending from a gas injection source and through a microwave guide and into the top of the reactor chamber. The semiconductor wafer rests near the bottom of the chamber on a wafer pedestal connected to a bias RF power source which is controlled independently of the microwave source coupled to the microwave guide. The microwaves from the waveguide ignite and maintain a plasma in each of the tubes. Gas flow through the tubes carries the plasmas in all the tubes into the chamber and into contact with the wafer surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.