Giant magnetoresistive effect memory cell
US5949707A · kind A · utility
19Cited by
14References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1996 |
| Grant date | Sep 7, 1999 |
| Priority date | — |
| Expiry date | Sep 6, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/205
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A digital data memory having a bit structure in a memory cell based on an intermediate separating material with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.