Method of manufacturing thin film transistor
US5953595A · kind A · utility
61Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1996 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Sep 27, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/949
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The manufacturing processes can be simplified and the reliability can be improved. A method of processing a thin film includes a first process of selectively forming a resist pattern on a ground surface, a second process of forming a thin film on the ground surface and a surface of the resist pattern, and a third process of removing the resist pattern to selectively remove the thin film deposited on the former, i.e., carrying out the lift-off, thereby the thin film process for a desired pattern being carried out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.