Patent · US Expired

Method of making a rim-type phase-shift mask and mask manufactured thereby

US5955222A · kind A · utility

29Cited by
10References
26Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 3, 1996
Grant dateSep 21, 1999
Priority date
Expiry dateDec 3, 2016

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/29
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method of making a rim-type phase shift mask comprising the steps of: providing a substrate having opposing first and second surfaces, the first surface being at least partially covered with a first layer of material that substantially blocks the transmission therethrough of electromagnetic radiation of the predetermined range of wavelengths; forming a plurality of openings extending through the first layer so as to expose underlying portions of the first surface of the substrate; depositing a layer of hybrid photoresist on the first layer; exposing the second surface of the substrate to electromagnetic radiation to activate the desired portions of the hybrid photoresist; developing the photoresist, thereby exposing portions underlying the resist; and etching the exposed portions of the substrate is disclosed. The hybrid photoresist material may be exposed at varying doses to alter the placement of the area that is soluble in developer solution so that the phase shifter may be placed in various areas, but is always aligned in a fixed relationship with the edge of the blocking material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.