Patent · US Expired

Lithographic proximity correction through subset feature modification

US5958635A · kind A · utility

38Cited by

2References

21Claims

0Family size

Assignee

Motorola, Inc. · US

Inventors

Alfred J. Reich · Austin, US
Hak-Lay Chuang · Hsinchu, TW
Michael E. Kling · Austin, US
Paul G. Y. Tsui · Austin, US
Kevin Lucas · Austin, US
James N. Conner · Austin, US

Key dates

Filing date	Oct 20, 1997
Grant date	Sep 28, 1999
Priority date	—
Expiry date	Oct 20, 2017

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S430/143
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Lithographic Proximity Correction (LPC) shapes are added (503) to a layer of a layout database file (501). Geometric criteria such as feature width are then used to filter the added LPC shapes (502). The LPC shapes are then modified (505) by determining which LPC shapes are within a predetermined distance from a shape in a layer of the second data base (504). The database file, including the modified LPC shapes, is then used to manufacture a set of lithographic masks (506). The lithographic masks are then used to pattern a set of wafers in the manufacture of integrated circuits (507).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.