Borderless vias without degradation of HSQ gap fill layers
US5958798A · kind A · utility
13Cited by
4References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 18, 1997 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | Dec 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Spin-on HSQ is employed to gap fill patterned metal layers in manufacturing ultra high density, multi-metal layer semiconductor devices. The degradation of deposited HSQ layers during formation of borderless vias, as from photoresist stripping using an O.sub.2 -containing plasma, is significantly reduced or prevented by including hydrogen in the stripping plasma. Embodiments include stripping in a plasma containing a sufficient amount of a forming gas (H.sub.2 /N.sub.2) to prevent reduction of the number of Si--H bonds of the deposited HSQ gap fill layer below about 70%, before and after solvent cleaning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.