Inventor · Sunnyvale, CA, US

Jeffrey A. Shields

89Patents
14h-index
110Co-inventors
87Inventor score

Filing activity: Oct 16, 1997 → Apr 6, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US6617215B1 Memory wordline hard mask Electricity 39 Expired
US7776682B1 Ordered porosity to direct memory element formation Electricity 29 Active
US6060384A Borderless vias with HSQ gap filled patterned metal layers Electricity 28 Expired
US6153504A Method of using a silicon oxynitride ARC for final metal layer Emerging Cross-Sectional Technologies 27 Expired
US6522013B1 Punch-through via with conformal barrier liner Electricity 26 Expired
US5866945A Borderless vias with HSQ gap filled patterned metal layers Electricity 26 Expired
US6114766A Integrated circuit with metal features presenting a larger landing area for vias Electricity 21 Expired
US6376877B1 Double self-aligning shallow trench isolation semiconductor and manufacturing method therefor Electricity 19 Expired
US6479348B1 Method of making memory wordline hard mask extension Electricity 17 Expired
US6709924B1 Fabrication of shallow trench isolation structures with rounded corner and self-aligned gate Emerging Cross-Sectional Technologies 16 Expired
US6589709B1 Process for preventing deformation of patterned photoresist features Electricity 15 Expired
US6774432B1 UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL Emerging Cross-Sectional Technologies 15 Expired
US6441418B1 Spacer narrowed, dual width contact for charge gain reduction Electricity 15 Expired
US6087724A HSQ with high plasma etching resistance surface for borderless vias Electricity 14 Expired
US6486506B1 Flash memory with less susceptibility to charge gain and charge loss Electricity 13 Expired
US6653231B2 Process for reducing the critical dimensions of integrated circuit device features Electricity 13 Expired
US6083850A HSQ dielectric interlayer Electricity 13 Expired
US8941089B2 Resistive switching devices and methods of formation thereof Electricity 13 Active
US5958798A Borderless vias without degradation of HSQ gap fill layers Electricity 13 Expired
US6492257B1 Water vapor plasma for effective low-k dielectric resist stripping Electricity 12 Expired
US6083851A HSQ with high plasma etching resistance surface for borderless vias Electricity 12 Expired
US6222761A Method for minimizing program disturb in a memory cell Physics 12 Expired
US7091088B1 UV-blocking etch stop layer for reducing UV-induced charging of charge storage layer in memory devices in BEOL processing Emerging Cross-Sectional Technologies 11 Expired
US6194328A H2 diffusion barrier formation by nitrogen incorporation in oxide layer Electricity 10 Expired
US8866122B1 Resistive switching devices having a buffer layer and methods of formation thereof Electricity 10 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.