Light-emitting semiconductor device using group III nitride compound

US5959401A · kind A · utility

Assignee

• TOYODA GOSEI CO., LTD. · JP

Inventors

• Shinya Asami · Ebeye, US
• Masayoshi Koike · Miyoshi, JP

Key dates

• Filing date: May 21, 1997
• Grant date: Sep 28, 1999
• Expiry date: May 21, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8252

Abstract

A light-emitting semiconductor device consecutively includes a sapphire substrate, an AlN buffer layer, a silicon (Si) doped n.sup.+ -layer GaN, a Si-doped n-type GaN, a zinc (Zn) and Si-doped In.sub.0.20 Ga.sub.0.80 N emission layer, a magnesium (Mg) doped p-type Al.sub.0.08 Ga.sub.0.92 N layer as a cladding layer, an Mg-doped p-type GaN layer as a first contact layer, and an Mg-doped p.sup.+ -type GaN layer as a second contact layer. The cladding layer and the first and second contact layers have a total thickness of 10 nm to 150 nm which is thinner than that of a conventional p-layers by a half to one thirtieth. The emission layer is exposed to high growth temperature for 1.3 min. to 20 min. which is shorter than that of the conventional emission layer by a half to one thirtieth. As a result, crystallinity of the emission layer is improved, because it is prevented that In of the emission layer diffuses into the cladding and the contact layers, that N of the emission layer evaporates, and that Mg of the cladding and the contact layers diffuses into the emission layer.