Low aspect ratio magnetoresistive tunneling junction
US5959880A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1997 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | Dec 18, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5615
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A low aspect ratio magnetoresistive tunneling junction memory cell includes two layers of magnetoresistive material separated by electrically insulating material so as to form a magnetoresistive tunneling junction. An exchange interaction layer is sandwiched between one layer of the junction and a third layer of magnetoresistive material so as to pin the magnetic vector of one layer of the junction anti-parallel to a magnetic vector in the third layer so that magnetostatic interaction between the junction layers is canceled and the magnetic vector of the one layer is free to move in either of the two directions parallel to the polarization axis. Antiferromagnetic material is positioned adjacent the third layer so as to fix the magnetic vector in the third layer uni-directionally parallel to the polarization axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.