Method of fabricating a semiconductor device utilizing polysilicon grains
US5960294A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1998 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | Jan 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method of fabricating capacitors for a dynamic random access memory device reduces double bit failures or shorts in the device. The method includes providing a semiconductor substrate underlying an insulative layer having a plurality of storage cells formed therein electrically connected to the substrate. A first conductive layer of rugged polysilicon, which functions as a first capacitor plate, is formed over the insulative layer in an oxygen-free atmosphere such that the first conductive layer is without natural oxides on the surface thereof. The surface of the first conductive layer in the oxygen-free atmosphere is then conditioned by a rapid thermal nitridization process which forms a silicon nitride film thereon. Thereafter, portions of the first conductive layer are removed from the insulative layer such that the plurality of storage cells are electrically isolated from one another. A dielectric layer is then formed over the first conductive layer and exposed insulative layer, followed by a second conductive layer, functioning as a second capacitor plate, being formed over the dielectric layer to complete the capacitor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.