Method for fabricating a storage plate of a semiconductor capacitor
US5960295A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 1998 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | Jan 20, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
The present invention provides a method for fabricating a storage plate of a semiconductor capacitor. A conductive layer is first formed on a semiconductor substrate. A glue layer is formed on the conductive layer. A plurality of micro masking-balls are then spread onto the surface of the glue layer. Using these micro masking-balls as masks, the glue layer is etched to expose a portion surface of the conductive layer. Using the remaining glue layer as a mask, the conductive layer is etched to form a bristle-shaped conductive layer. After that, the glue layer and micro masking-balls are removed, thereby allowing the remaining bristle-shaped conductive layer to form a storage plate of a semiconductor capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.