Shiou-Yu Wang
14Patents
7h-index
18Co-inventors
55Inventor score
Filing activity: Sep 22, 1997 → Jun 24, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5989952A | Method for fabricating a crown-type capacitor of a DRAM cell | Electricity | 27 | Expired |
| US5955757A | Dram structure with multiple memory cells sharing the same bit-line contact | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6337173B2 | Method for fabricating a semiconductor capacitor | Electricity | 13 | Expired |
| US7193895B2 | Redundant memory content substitution apparatus and method | Physics | 9 | Expired |
| US6180993A | Ion repulsion structure for fuse window | Electricity | 8 | Expired |
| US6115834A | Method for quickly identifying floating cells by a bit-line coupling pattern (BLCP) | Physics | 8 | Expired |
| US6403418B2 | Method of fabricating cup-shape cylindrical capacitor of high density DRAMs | Electricity | 7 | Expired |
| US5960295A | Method for fabricating a storage plate of a semiconductor capacitor | Electricity | 7 | Expired |
| US5923989A | Method of fabricating rugged capacitor of high density DRAMs | Electricity | 6 | Expired |
| US6940315B2 | High speed sense amplifier for memory output | Physics | 4 | Expired |
| US6057187A | DRAM structure with multiple memory cells sharing the same bit-line contact and fabrication method thereof | Emerging Cross-Sectional Technologies | 2 | Expired |
| US5966610A | Method of fabricating capacitor plate | Electricity | 2 | Expired |
| US6091653A | Method of sensing data in semiconductor memory device | Physics | 1 | Expired |
| US6320416A | Input buffer means for high voltage operation | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.