Method for manufacturing electrode plate for plasma processing device
US5961361A · kind A · utility
3Cited by
3References
6Claims
0Family size
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Inventors
Key dates
| Filing date | Sep 22, 1997 |
| Grant date | Oct 5, 1999 |
| Priority date | — |
| Expiry date | Sep 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/02
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method manufactures an electrode plate for a plasma processing device in which a semiconductor wafer is processed to form a highly integrated circuit. The method includes a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material one or two backing steps of carbonizing the heat-cured resin forming material by heating under a non-oxidizing atmosphere to prepare a baking material composed of glass-like carbon and a polishing step of polishing one face of the baking material, which is exposed to plasma, to a depth of 20 .mu.m to 1.25 mm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.