Etching of silicon nitride
US5965465A · kind A · utility
12Cited by
46References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1997 |
| Grant date | Oct 12, 1999 |
| Priority date | — |
| Expiry date | Sep 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon nitride is etched employing a composition containing a fluoride containing compound, certain organic solvents, and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.