Structure and method of formation of body contacts in SOI MOSFETS to elimate floating body effects

US5965917A · kind A · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Witold P. Maszara · معلمی نژاد, US
• Srinath Krisnan · Campbell, US

Key dates

• Filing date: Jan 4, 1999
• Grant date: Oct 12, 1999
• Expiry date: Jan 4, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6729

Abstract

A silicon-on-insulator MOSFET includes a silicon layer and an insulator layer positioned over a silicon substrate. An isolation region defines a silicon region positioned over the insulator layer. The silicon region further includes a source region, a drain region, and a doped body region. The drain region and source region do not extend to the bottom of the silicon region. A first metal conductor is electrically coupled to the side and top of the source region and the side of the body region. The first metal conductor establishes a potential at the body region to control floating body effects. A second metal conductor is electrically coupled to the top of the drain region.