Inventor · معلمی نژاد, CA, US

Witold P. Maszara

60Patents
18h-index
37Co-inventors
84Inventor score

Filing activity: Feb 14, 1991 → Mar 18, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US6184112A Method of forming a MOSFET transistor with a shallow abrupt retrograde dopant profile Electricity 127 Expired
US6060364A Fast Mosfet with low-doped source/drain Electricity 124 Expired
US6680240B1 Silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide Electricity 118 Expired
US7078299B2 Formation of finFET using a sidewall epitaxial layer Emerging Cross-Sectional Technologies 103 Expired
US6955969B2 Method of growing as a channel region to reduce source/drain junction capacitance Electricity 88 Expired
US6245636A Method of formation of pseudo-SOI structures with direct contact of transistor body to the substrate Electricity 63 Expired
US6586808B1 Semiconductor device having multi-work function gate electrode and multi-segment gate dielectric Electricity 54 Expired
US6630720B1 Asymmetric semiconductor device having dual work function gate and method of fabrication Electricity 51 Expired
US5965917A Structure and method of formation of body contacts in SOI MOSFETS to elimate floating body effects Electricity 41 Expired
US6815297B1 Ultra-thin fully depleted SOI device and method of fabrication Electricity 39 Expired
US6204138A Method for fabricating a MOSFET device structure which facilitates mitigation of junction capacitance and floating body effects Electricity 37 Expired
US6444534B1 SOI semiconductor device opening implantation gettering method Electricity 32 Expired
US8466034B2 Method of manufacturing a finned semiconductor device structure Electricity 25 Active
US8673718B2 Methods of forming FinFET devices with alternative channel materials Electricity 22 Active
US5250454A Method for forming thickened source/drain contact regions for field effect transistors Electricity 20 Expired
US8580642B1 Methods of forming FinFET devices with alternative channel materials Electricity 19 Active
US7871873B2 Method of forming fin structures using a sacrificial etch stop layer on bulk semiconductor material Electricity 19 Active
US8859389B2 Methods of making fins and fin field effect transistors (FinFETs) Electricity 18 Active
US6362063B1 Formation of low thermal budget shallow abrupt junctions for semiconductor devices Electricity 18 Expired
US6238960A Fast MOSFET with low-doped source/drain Electricity 17 Expired
US8101486B2 Methods for forming isolated fin structures on bulk semiconductor material Electricity 15 Active
US6599831B1 Metal gate electrode using silicidation and method of formation thereof Electricity 15 Expired
US6399452B1 Method of fabricating transistors with low thermal budget Electricity 15 Expired
US6492209B1 Selectively thin silicon film for creating fully and partially depleted SOI on same wafer Electricity 14 Expired
US8716074B2 Methods for forming isolated fin structures on bulk semiconductor material Electricity 14 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.