Giant magnetoresistive effect memory cell
US5966322A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 1997 |
| Grant date | Oct 12, 1999 |
| Priority date | — |
| Expiry date | Sep 4, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/205
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A digital data memory having a bit structure in a memory cell based on an intermediate separating material with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations. Bit structures can be fabricated with further alternating intermediate separating, material layers and varied thickness ferromagnetic thin-film layers, and a configuration thereof can be provided for use as an isolated memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.