Method of fabricating capacitor plate

US5966610A · kind A · utility

Assignee

• NANYA TECHNOLOGY CORPORATION · TW

Inventors

• Shiou-Yu Wang · Taipei, TW
• Tean-Sen Jen · Tuen Mun, CN
• Jia-Shyong Cheng · Taoyuan, TW

Key dates

• Filing date: Jan 5, 1998
• Grant date: Oct 12, 1999
• Expiry date: Jan 5, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/315

Abstract

A method of fabricating a capacitor plate constitutes first providing a substrate. Then, first insulating layer is formed over the substrate. Sequentially, a buffering layer and a second insulating layer, both of which constitute a stacked structure, are formed over the first insulating layer. Next, the stacked structure is patterned into an opening thereby exposing a portion of the first insulating layer therethrough. Subsequently, conducting spacers are formed on the sidewalls of the opening. The second insulating layer is thereafter removed, and simultaneously a portion of the first insulating layer not covered by the buffering layer and the conducting spacers are removed to form a contact window, thereby exposing a portion of the substrate therethrough. Then, a conducting layer is conformably deposited over the substrate, and thereafter etched away until a portion of the buffering layer is exposed. Finally, the exposed buffering layer is removed. The remaining conducting layer and the conducting spacers constitute the capacitor's bottom electrode plate.