Methods and apparatus for passivating a substrate in a plasma reactor
US5968275A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1997 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Jun 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing system configured for use in processing a substrate after metal etching. The substrate includes a layer of photoresist disposed thereon. The plasma processing system includes a plasma generating region and a baffle plate disposed between the plasma generating region and the substrate. The baffle plate includes a central blocked portion disposed in a center region of the baffle plate. The baffle plate further includes an annular porous portion surrounding the central blocked portion. The annular porous portion includes a plurality of through holes configured for permitting a H.sub.2 O plasma generated in the plasma generating region to pass through the holes to reach a surface of the substrate. The plasma processing system also includes a chuck disposed below the baffle plate to support the substrate during the processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.