Method of electroplating a copper or copper alloy interconnect
US5968333A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1998 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Apr 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/09845
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Copper or a copper alloy is electroplated to fill via/contact holes and/or trenches in a dielectric layer. A barrier layer is initially deposited on the dielectric layer lining the hole/trench. A thin conformal layer of copper or a copper alloy is sputter deposited on the barrier layer outside the hole/trench. Copper or a copper alloy is then electroplated on the conformal copper or copper alloy layer and filling the hole/trench. During electroplating, the barrier layer functions as a seed layer within the hole/trench while the sputter deposited conformal copper or copper alloy layer enhances the flow of electrons from the wafer edge inwardly to provide a favorable deposition rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.