Plated copper interconnect structure
US5969422A · kind A · utility
625Cited by
12References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 1997 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | May 15, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high conductivity interconnect structure is formed by electroplating or electroless plating of Cu or a Cu-base alloy on a seed layer comprising an alloy of a catalytically active metal, such as Cu, and a refractory metal, such as Ta. The seed layer also functions as a barrier/adhesion layer for the subsequently plated Cu or Cu-base alloy. Another embodiment comprises initially depositing a refractory metal barrier layer before depositing the seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.