Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition
US5969423A · kind A · utility
6Cited by
25References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1997 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Jul 15, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/937
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is formed by introducing hydrogen gas and oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The alumininum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.