Kanwal K. Raina
40Patents
8h-index
10Co-inventors
68Inventor score
Filing activity: Sep 16, 1992 → May 2, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6137214A | Display device with silicon-containing adhesion layer | Electricity | 81 | Expired |
| US6537427B1 | Deposition of smooth aluminum films | Electricity | 54 | Expired |
| US6106351A | Methods of manufacturing microelectronic substrate assemblies for use in planarization processes | Electricity | 44 | Expired |
| US6064149A | Field emission device with silicon-containing adhesion layer | Electricity | 42 | Expired |
| US6211608A | Field emission device with buffer layer and method of making | Electricity | 23 | Expired |
| US6015323A | Field emission display cathode assembly government rights | Electricity | 18 | Expired |
| US6348403B1 | Suppression of hillock formation in thin aluminum films | Electricity | 13 | Expired |
| US6657376B1 | Electron emission devices and field emission display devices having buffer layer of microcrystalline silicon | Electricity | 9 | Expired |
| US6461211B2 | Method of forming resistor with adhesion layer for electron emission device | Electricity | 8 | Expired |
| US6635983B1 | Nitrogen and phosphorus doped amorphous silicon as resistor for field emission device baseplate | Electricity | 8 | Expired |
| US6139385A | Method of making a field emission device with silicon-containing adhesion layer | Electricity | 7 | Expired |
| US5969423A | Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6194783A | Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6140701A | Suppression of hillock formation in thin aluminum films | Electricity | 4 | Expired |
| US6545407B1 | Electron emission apparatus | Electricity | 3 | Expired |
| US6222271A | Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6509686B1 | Field emission display cathode assembly with gate buffer layer | Electricity | 3 | Expired |
| US7097526B2 | Method of forming nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate | Electricity | 3 | Expired |
| US6425791B1 | Method of making a field emission device with buffer layer | Electricity | 3 | Expired |
| US6057238A | Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7161211B2 | Aluminum-containing film derived from using hydrogen and oxygen gas in sputter deposition | Emerging Cross-Sectional Technologies | 3 | Expired |
| US5314869A | Method for forming single phase, single crystalline 2122 BCSCO superconductor thin films by liquid phase epitaxy | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6455939B1 | Substantially hillock-free aluminum-containing components | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6107688A | Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6838815B2 | Field emission display with smooth aluminum film | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.