Patent · US Expired

Method of forming multilayer amorphous silicon antifuse

US5970372A · kind A · utility

33Cited by

12References

11Claims

0Family size

Assignee

XILINX, INC. · US

Inventors

Michael J. Hart · Palo Alto, US
Kevin T. Look · Fremont, US
Yakov Karpovich · Campbell, US

Key dates

Filing date	Dec 30, 1997
Grant date	Oct 19, 1999
Priority date	—
Expiry date	Dec 30, 2017

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3011
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Antifuses are provided which include first and second conductive layers and an antifuse layer positioned between the first and second conductive layers. The antifuse layer includes at least one oxide layer positioned between two amorphous silicon layers. Interconnect structures and programmable logic devices are also provided which include the antifuses.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.