Adhesion promoting sacrificial etch stop layer in advanced capacitor structures
US5972722A · kind A · utility
65Cited by
17References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 14, 1998 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | Apr 14, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-k dielectric capacitor structure and fabrication method that incorporates an adhesion promoting etch stop layer 200 to promote adhesion of the bottom electrode 220 to the interlevel dielectric layer 210 and to provide a well controlled, repeatable and uniform recess prior to the dielectric 230 deposition. By using a sacrificial layer 200, for example silicon nitride (Si3N4), this layer can act as an etch stop during the recess etch to eliminate parasitic capacitance between adjacent capacitor cells A and B and can promote adhesion of the bottom electrode material 220 to the substrate 210.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.