Ion implantation feedback monitor using reverse process simulation tool
US5972728A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 1997 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | Dec 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of obtaining accurate actual ion implantation equipment used in ion implantation processes during the manufacture of semiconductor devices. A monitor structure for each ion implant process is implanted with ions during the ion implant process. A control monitor structure is implanted with boron ions. The concentration profiles of all implanted monitor structure are determined during wafer electrical tests (WET). The as-implanted concentration profile is determined for the boron-implanted control monitor structure and the thermal budget of the manufacturing process is determined. The as-implanted concentration profiles of the remaining monitor structures are determined using the thermal budget determined from the boron-implanted control monitor structure. The actual operating parameters of the ion implantation equipment is determined from the as-implanted concentration profiles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.