Use of deuterated materials in semiconductor processing
US5972765A · kind A · utility
93Cited by
2References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1997 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | Jul 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of forming a film for a semiconductor device in which a source material comprising a deuterated species is provided during formation of the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.