Self-aligned multiple crown storage capacitor and method of formation
US5972769A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1997 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | Dec 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
Abstract
A self-aligned multiple crown storage cell structure 10 for use in a semiconductor memory device and method of formation that provide a storage capacitor with increased capacitance. A double crown storage cell structure embodiment 10 can be formed by patterning a contact via 18 into a planarized base layer that can include an insulating layer 12, an etch stop layer 14, and a hard mask layer 16, depositing a first conductive layer 20, etching the first conductive layer 20, etching the hard mask layer 16, depositing a second conductive layer 24 onto the conductive material-coated patterned via 18 and the etch stop layer 14, depositing a sacrificial (oxide) layer 26 onto the second conductive layer 24, etching the sacrificial layer 26, depositing a third conductive layer 28, and etching conductive material and the remaining sacrificial layer 26. The last several steps can be repeated to form a storage cell structure 10 with three or more crowns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.