In-situ barc and nitride etch process
US5972796A · kind A · utility
2Cited by
13References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 10, 1997 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | Dec 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a semiconductor device (10) having BARC layer (22) and nitride layer (20) includes etching BARC layer (22) until reaching a first set point in the fabrication reaction chamber and then etching nitride layer (20) in-situ the fabrication reaction chamber immediately following etching BARC layer (22).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.