Fred Fishburn
74Patents
23h-index
47Co-inventors
88Inventor score
Filing activity: May 5, 1992 → Jun 1, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7202127B2 | Methods of forming a plurality of capacitors | Electricity | 83 | Expired |
| US10607995B2 | Memory arrays | Electricity | 57 | Active |
| US7413952B2 | Methods of forming a plurality of circuit components and methods of forming a plurality of structures suspended elevationally above a substrate | Electricity | 41 | Active |
| US6372574B1 | Method of forming a capacitor container electrode and method of patterning a metal layer by selectively silicizing the electrode or metal layer and removing the silicized portion | Emerging Cross-Sectional Technologies | 41 | Expired |
| US7268039B2 | Method of forming a contact using a sacrificial structure | Electricity | 37 | Active |
| US7517754B2 | Methods of forming semiconductor constructions | Electricity | 33 | Active |
| US6707088B2 | Method of forming integrated circuitry, method of forming a capacitor, method of forming DRAM integrated circuitry and DRAM integrated category | Emerging Cross-Sectional Technologies | 31 | Expired |
| US7153778B2 | Methods of forming openings, and methods of forming container capacitors | Emerging Cross-Sectional Technologies | 30 | Expired |
| US6475855B1 | Method of forming integrated circuitry, method of forming a capacitor and method of forming DRAM integrated circuitry | Emerging Cross-Sectional Technologies | 30 | Expired |
| US6787833B1 | Integrated circuit having a barrier structure | Electricity | 30 | Expired |
| US6962846B2 | Methods of forming a double-sided capacitor or a contact using a sacrificial structure | Electricity | 30 | Expired |
| US7321150B2 | Semiconductor device precursor structures to a double-sided capacitor or a contact | Electricity | 27 | Expired |
| US7445990B2 | Methods of forming a plurality of capacitors | Emerging Cross-Sectional Technologies | 27 | Expired |
| US7538036B2 | Methods of forming openings, and methods of forming container capacitors | Emerging Cross-Sectional Technologies | 26 | Active |
| US7273779B2 | Method of forming a double-sided capacitor | Electricity | 26 | Expired |
| US7321149B2 | Capacitor structures, and DRAM arrays | Emerging Cross-Sectional Technologies | 25 | Expired |
| US7005379B2 | Semiconductor processing methods for forming electrical contacts | Electricity | 25 | Expired |
| US7341909B2 | Methods of forming semiconductor constructions | Electricity | 25 | Expired |
| US7071055B2 | Method of forming a contact structure including a vertical barrier structure and two barrier layers | Electricity | 24 | Expired |
| US7442600B2 | Methods of forming threshold voltage implant regions | Electricity | 23 | Expired |
| US7384847B2 | Methods of forming DRAM arrays | Emerging Cross-Sectional Technologies | 23 | Expired |
| US7335935B2 | Semiconductor structures | Electricity | 23 | Active |
| US7638392B2 | Methods of forming capacitor structures | Electricity | 23 | Expired |
| US7759193B2 | Methods of forming a plurality of capacitors | Electricity | 23 | Active |
| US7279379B2 | Methods of forming memory arrays; and methods of forming contacts to bitlines | Emerging Cross-Sectional Technologies | 22 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.