Insulated gate type bipolar-transistor
US5973338A · kind A · utility
8Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1997 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | Oct 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
Abstract
An insulated gate type bipolar-transistor (IGBT) incorporates an excess voltage protecting function and drain voltage fixing function in a monolithic structure. Impurity concentration ND and the thickness of an n.sup.- type drain layer (3) is set so that a depletion region propagating from a p type base layer (7) reaches a p.sup.+ type drain layer at a voltage (V.sub.DSP) lower than a voltage (V.sub.DSS) at which avalanche breakdown is caused within the IGBT element when voltage is applied between the source and the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.