Semiconductor device with high dielectric constant insulator material
US5973351A · kind A · utility
21Cited by
11References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 22, 1997 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | Jan 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a capacitor containing an insulator material having a high dielectric constant and high charge storing capability of the following formula: (A.sup.1).sub.x (A.sup.2).sub.2-x (D).sub.d (B.sup.1).sub.y (B.sup.2).sub.1-y O.sub.4 where A.sup.1 and A.sup.2 are cations, B.sup.1 and B.sup.2 are anions, 0.ltoreq.x.ltoreq.2 with the proviso that A.sup.1 and A.sup.2 are different types of atoms when 0<x<2, and 0.ltoreq.y.ltoreq.1 with the proviso that B.sup.1 and B.sup.2 are different types of atoms when 0<y<1, and D is an optional dopant in a total amount of 0.ltoreq.d.ltoreq.0.1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.