Tapered isolated metal profile to reduce dielectric layer cracking
US5973387A · kind A · utility
5Cited by
0References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1997 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | Dec 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Leading and trailing metal features in a dense array of conductive lines bordering an open field are formed with side surfaces that gradually taper in the direction of the open field toward an underlying substrate. Each side surface bordering the open field is formed with a sufficient slope to reduce cracking of the subsequently deposited dielectric gap fill layer at high stress areas bordering the open field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.