Pattern forming method using charged particle beam process and charged particle beam processing system
US5976328A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1997 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Jan 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/317
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber (18) provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering. The workpiece is returned to the load-lock chamber after a pattern has been formed thereon in the processing chamber by reactive processing including irradiating the surface of the workpiece with a charged particle beam in an environment of the reactive gas, and the workpiece is subjected to a plasma process to remove the reactive gas adsorbed by the workpiece during pattern formation and adhering to the workpiece…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.