Low TCE polyimides as improved insulator in multilayer interconnect structures
US5976710A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1997 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Apr 10, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31721
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multilevel high density interconnect structure of a semiconductor device or package including a substrate having at least one conductive feature therein, a film of a polyimide composition on the substrate and selected from the group consisting of a cured product of a polyamic acid and a cured product of a polyamic ester. The polyamic acid is prepared by reacting a stoichiometric excess of a linear aromatic diamine and aromatic dianhydride to form a first reaction product where the molar ratio of said diamine to said aromatic anhydride is in the range from 100:97 to 100:99.5 and then reacting the first reaction product with an aromatic anhydride. The polyamic ester is prepared by reacting a stoichiometric excess of a linear aromatic diamine and an aromatic diester diacyl chloride to form a second reaction product where the molar ratio of said diamine to said diester diacyl chloride is in the range from 100:97 to 100:99.5 and then reacting the second reaction product with aromatic anhydride. There is at least one interconnective conductive metallurgical feature in the film a polyimide composition in contact with said conductive feature in said substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.