Chemical mechanical polishing of FeRAM capacitors
US5976928A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 1997 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Nov 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/038
Abstract
A method of fabricating a ferroelectric capacitor structure by sequentially depositing a bottom electrode layer, a ferroelectric layer and a top electrode layer on a base structure, optionally with deposition of a layer of a conductive barrier material beneath the bottom electrode layer, to form a capacitor precursor structure, and planarizing the capacitor precursor structure by chemical mechanical polishing to yield the ferroelectric capacitor structure, e.g., a stack capacitor or trench capacitor. The process is carried out without dry etching of the electrode layers or dry etching of the ferroelectric layer, to yield ferroelectric capacitors having a very small feature size, as for example between 0.10 and 0.20 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.