Low pressure and low power C1.sub.2 /HC1 process for sub-micron metal etching

US5976986A · kind A · utility

Assignees

• International Business Machines Corporation · US
• Siemens Aktiengesellschaft · DE
• Kabushiki Kaisha Toshiba · JP

Inventors

• Munir D. Naeem · Poughkeepsie, US
• Stuart M. Burns · Ridgefield, US
• Rosemary Christie · Hopewell Junction, US
• Virinder Grewal · Wappingers Falls, US
• Walter W. Kocon · Wappingers Falls, US
• Masaki Narita · Tokyo, JP
• Bruno Spuler · Wappingers Falls, US
• Chi-Hua Yang · Yorktown, US

Key dates

• Filing date: Aug 6, 1996
• Grant date: Nov 2, 1999
• Expiry date: Aug 6, 2016

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23F4/00
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

RIE of metallization is achieved at low power and low pressure using Cl.sub.2 and HCl as reactant species by creating a transformer coupled plasma with power applied to electrodes positioned both above and below a substrate with metallization thereon to be etched. Three layer metallizations which include bulk aluminum or aluminum alloy sandwiched between barrier layers made from, for example, Ti/TiN, are etched in a three step process wherein relatively lower quantities of Cl.sub.2 are used in the plasma during etching of the barrier layers and relatively higher quantities of Cl.sub.2 are used during etching of the bulk aluminum or aluminum alloy layer. The ratio of etchants Cl.sub.2 and HCl and an inert gas, such as N.sub.2 are controlled in a manner such that a very thin side wall layer (10-100 .ANG.) of reaction byproducts created during RIE are deposited on the side walls of trenches formed in the metallization during etching. The side wall layer improves the isotropic nature of the etch such that submicron metallization lines with defect free side walls are formed. Hydrogen (H.sub.2) can be added to the plasma and will act to reduce corrosion.