Method for reducing the intrinsic stress of high density plasma films
US5976993A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 1996 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Mar 28, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.