Kent Rossman
22Patents
13h-index
18Co-inventors
74Inventor score
Filing activity: Mar 28, 1996 → Oct 11, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6559026B1 | Trench fill with HDP-CVD process including coupled high power density plasma deposition | Electricity | 549 | Expired |
| US6589868B2 | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput | Emerging Cross-Sectional Technologies | 533 | Expired |
| US6846742B2 | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput | Emerging Cross-Sectional Technologies | 461 | Expired |
| US6194038A | Method for deposition of a conformal layer on a substrate | Electricity | 290 | Expired |
| US6843858B2 | Method of cleaning a semiconductor processing chamber | Emerging Cross-Sectional Technologies | 283 | Expired |
| US6121161A | Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions | Chemistry; Metallurgy | 60 | Expired |
| US6077357A | Orientless wafer processing on an electrostatic chuck | Electricity | 52 | Expired |
| US5748434A | Shield for an electrostatic chuck | Electricity | 50 | Expired |
| US5976993A | Method for reducing the intrinsic stress of high density plasma films | Electricity | 33 | Expired |
| US5811356A | Reduction in mobile ion and metal contamination by varying season time and bias RF power during chamber cleaning | Emerging Cross-Sectional Technologies | 32 | Expired |
| US6704913B2 | In situ wafer heat for reduced backside contamination | Electricity | 30 | Expired |
| US6696362B2 | Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes | Electricity | 21 | Expired |
| US6527910B2 | Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD | Electricity | 13 | Expired |
| US6458722B1 | Controlled method of silicon-rich oxide deposition using HDP-CVD | Chemistry; Metallurgy | 10 | Expired |
| US6821577B2 | Staggered in-situ deposition and etching of a dielectric layer for HDP CVD | Electricity | 9 | Expired |
| US7159597B2 | Multistep remote plasma clean process | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6514870B2 | In situ wafer heat for reduced backside contamination | Electricity | 8 | Expired |
| US7132134B2 | Staggered in-situ deposition and etching of a dielectric layer for HDP CVD | Electricity | 5 | Expired |
| US7294205B1 | Method for reducing the intrinsic stress of high density plasma films | Electricity | 5 | Expired |
| US6559052B2 | Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures | Electricity | 5 | Expired |
| US7455893B2 | Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD | Electricity | 3 | Active |
| US6524969B2 | High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.