Semiconductor devices constructed from crystallites
US5977612A · kind A · utility
28Cited by
0References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1996 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Dec 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to electronic devices formed in crystallites of III-V nitride materials. Specifically, the present invention simplifies the processing technology required for the fabrication of high-performance electronic devices in III-V nitride materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.