Semiconductor integrated circuit device and process for manufacturing the same
US5981369A · kind A · utility
24Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 1997 |
| Grant date | Nov 9, 1999 |
| Priority date | — |
| Expiry date | May 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a process for manufacturing a semiconductor integrated circuit device having a MISFET, in order that a shallow junction between the source/drain of the MISFET and a semiconductor substrate may be realized by reducing the number of heat treatment steps, all conductive films to be deposited on the semiconductor substrate are deposited at a temperature of 500.degree. C. or lower at a step after the MISFET has been formed. Moreover, all insulating films to be deposited over the semiconductor substrate are deposited at a temperature of 500.degree. C. or lower at a step after the MISFET has been formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.