Yoshitaka Tadaki
49Patents
19h-index
104Co-inventors
84Inventor score
Filing activity: Mar 15, 1988 → Jul 7, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6737318B2 | Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring | Electricity | 105 | Expired |
| US5629898A | Dynamic memory device, a memory module, and a method of refreshing a dynamic memory device | Physics | 82 | Expired |
| US5504029A | Method of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETs | Electricity | 79 | Expired |
| US6483136B1 | Semiconductor integrated circuit and method of fabricating the same | Electricity | 59 | Expired |
| US5153685A | Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring | Electricity | 57 | Expired |
| US6258649A | Semiconductor integrated circuit device and method of manufacturing the same | Electricity | 56 | Expired |
| US5804479A | Method for forming semiconductor integrated circuit device having a capacitor | Electricity | 46 | Expired |
| US6215144A | Semiconductor integrated circuit device, and method of manufacturing the same | Electricity | 41 | Expired |
| US5734188A | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same | Electricity | 37 | Expired |
| US6649956B2 | Semiconductor integrated circuit device and manufacturing method thereof | Electricity | 32 | Expired |
| US4907046A | Semiconductor device with multilayer silicon oxide silicon nitride dielectric | Electricity | 29 | Expired |
| US7042038B2 | Semiconductor integrated circuit device and manufacturing method thereof | Electricity | 28 | Expired |
| US5578849A | Semiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitance | Electricity | 25 | Expired |
| US5981369A | Semiconductor integrated circuit device and process for manufacturing the same | Electricity | 24 | Expired |
| US5349218A | Semiconductor integrated circuit device including memory cells having a structure effective in suppression of leak current | Electricity | 22 | Expired |
| US5732009A | Semiconductor integrated circuit device including a DRAM in which a cell selection transistor has a stabilized threshold voltage | Electricity | 22 | Expired |
| US5917211A | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same | Electricity | 21 | Expired |
| US5264712A | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same | Electricity | 21 | Expired |
| US6291847A | Semiconductor integrated circuit device and process for manufacturing the same | Electricity | 20 | Expired |
| US5930624A | Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring | Electricity | 17 | Expired |
| US6399438B2 | Method of manufacturing semiconductor integrated circuit device having a capacitor | Electricity | 17 | Expired |
| US6287912A | Method of fabricating semiconductor device | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6060352A | Method of manufacturing semiconductor device with increased focus margin | Electricity | 9 | Expired |
| US7512038B2 | Ultrasonic transducer and manufacturing method | Emerging Cross-Sectional Technologies | 8 | Active |
| US5933726A | Method of forming a semiconductor device have a screen stacked cell capacitor | Electricity | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.