Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell

US5985698A · kind A · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Fernando Gonzalez · Boise, US
• Raymond A. Turi · Boise, US
• Graham R. Wolstenholme · Boise, US
• Charles L. Ingalls · Meridian, US

Key dates

• Filing date: Apr 30, 1997
• Grant date: Nov 16, 1999
• Expiry date: Apr 30, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/20

Abstract

A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed proximate to inner surfaces of a diode container. A multi-state memory element may be formed of a multi-state material, such as a chalcogenide, above a diode to complete a memory cell.