Process for overcoming CVD aluminum selectivity loss with warm PVD aluminum
US5989633A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 29, 1996 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Apr 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a process for depositing a planarized metal film on a dielectric surface having nonuniform conductor material deposits formed thereon. The planarized metal layer is formed using a warm physical vapor deposition process at a temperature greater than about 150.degree. C., preferably greater than about 250.degree. C. The nonuniform deposits of electrically conducting material are typically formed during selective chemical vapor deposition of a metal in high aspect ratio, subhalf micron apertures. The selective CVD deposition is directly followed by warm physical vapor deposition to obtain a planarized metal film. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the apertures to form interconnects occurs without the formation of oxides between the layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.