Semiconductor single crystalline substrate and method for production thereof
US5989985A · kind A · utility
4Cited by
1References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 1997 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Jun 27, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor single crystalline substrate provided with a protecting film to prevent autodoping on the reverse surface thereof, for growing a vapor-phase epitaxial layer on the main obverse surface thereof, a width of a chamfer is set for locating an edge-crown occurred in consequence of a vapor-phase epitaxial growth on the chamfer, and a gap of a distance is formed between a periphery of the protecting film and an innermost part of the chamfer on the reverse surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.