Method for galvanic forming of bonding pads
US5989993A · kind A · utility
16Cited by
10References
14Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Apr 22, 1996 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Apr 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for the preparation of electrodeposited or galvanically deposited bumps for the bonding of integrated circuits, characterized by two subsequent metal depositions, deposited without an external current source (chemical metal deposition) on a metallization 1, the first deposition being thicker than the second and the second deposition being more even or more regular throughout a large area than the first one.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.