Method for producing contact structures
US5989994A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1998 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Dec 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/4015
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A production method for forming contact structures on a planar surface of a substrate. The production method includes the steps of: (a) forming a sacrificial layer on a surface of a silicon substrate, (b) forming an conductive layer made of electric conductive material on the sacrificial layer, (c) forming a photoresist layer on the conductive layer, (d) aligning a photo mask over the photoresist layer and exposing the photoresist layer with ultraviolet light through the photo mask where the photo mask including an image of the contact structures, (e) developing the image on the photoresist layer which has openings on the surface of the photoresist layer, (f) forming the contact structures made of electric conductive material in the openings by an electroplating process, (g) stripping the photoresist layer, (h) placing an adhesive tape on the contact structure, and (i) removing the sacrificial layer and the conductive layer by an etching process to separate the contact structures on the adhesive tape from the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.