Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
US5990000A · kind A · utility
257Cited by
11References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1997 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Feb 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and an apparatus for depositing a dielectric layer to fill in a gap between adjacent metal lines. In preferred embodiments of the method, a first dielectric layer is deposited over the lines and subsequently etched using both chemical and physical etchback steps. After the etchback steps are completed, a second dielectric layer is deposited over the first dielectric layer to fill in the gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.