Diamond etch stop rendered conductive by a gas cluster ion beam implant of titanium
US5990493A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 1998 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | May 14, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method if provided for forming a diamond etch stop layer across a transistor to protect the source and drain junctions and the gate conductor of the transistor from being etched. The diamond may be CVD deposited from a hydrocarbon-bearing gas across the transistor. An interlevel dielectric comprising oxide is formed across the diamond etch stop layer. Contact openings may be etched through the oxide interlevel dielectric to the source and drain junctions and the gate conductor using a fluorine-bearing plasma. Advantageously, a high etch rate selectivity of oxide to diamond may be achieved using the fluorine-bearing plasma. As such, the plasma etch may be terminated well before significant portions of the diamond can be removed. Ti atoms may be implanted into regions of the diamond exposed by the contact openings and subsequently heated to render those regions of the diamond conductive. Contacts may be formed within the contact openings upon the conductive diamond which are electrically linked to the source and drain junctions and the gate conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.