Particle controlling method and apparatus for a plasma processing chamber
US5993594A · kind A · utility
54Cited by
19References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1996 |
| Grant date | Nov 30, 1999 |
| Priority date | — |
| Expiry date | Sep 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing chamber includes a substrate holder and a member of silicon nitride such as a liner, focus ring or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize particle contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.